Renesas' AE4 IGBTs for automotive applications use a unique trench gate configuration in its process structure. These devices achieve low saturation voltage without sacrificing robustness and also have low switching losses. This 750 V/300 A IGBT is optimized for high-power applications such as hybrid and electric vehicle drive inverters.
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类型 | 文档标题 | 日期 |
数据手册 | 登录后下载 PDF 143 KB | |
应用文档 | PDF 1.11 MB 日文 | |
应用文档 | PDF 648 KB 日文 | |
应用文档 | PDF 941 KB 日文 | |
应用文档 | PDF 1.05 MB 日文 | |
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Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.
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Sawn Wafer |
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世界上性能最好的IGBT产品,响应xEV(电动汽车)的节能和高性能 | 博客 | 2021年7月19日 |