The R1RW0416D is a 4-Mbit High-Speed static RAM organized 256-kword × 16-bit. It has realized High-Speed access time by employing CMOS process (6-transistor memory cell) and High-Speed circuit designing technology. It is most appropriate for the application which requires High-Speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. Especially, LVersion and S-Version are low power consumption and it is the best for the battery backup system. The package prepares 400-mil 44-pin SOJ and 400-mil 44-pin plastic TSOPII for high density surface mounting.
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PLP |
Pkg. Type |
Carrier Type |
Moisture Sensitivity Level (MSL) |
Price (USD) | 1ku |
ご購入 / サンプル |
|
---|---|---|---|---|---|---|
型名 | ||||||
N/A | SOJ | Tube | 3 | 5.561 | ||
N/A | SOJ | Tube | 3 | |||
2032 12月 | TSOP(44) | Tray | 3 | 4.99 | ||
2032 12月 | TSOP(44) | Embossed Tape | 3 | 4.463 | ||
2032 12月 | TSOP(44) | Tray | 3 | 5.393 | ||
R1RW0416DSB-2PR#D1 circleアクティブ サンプル入手可能 |
2032 12月 | TSOP(44) | Tray | 3 | 4.09 | サンプルを入手, |
2032 12月 | TSOP(44) | Embossed Tape | 3 | |||
2032 12月 | TSOP(44) | Tray | 3 | 4.99 |